Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 70: Semiconductor Lasers I

HL 70.11: Vortrag

Donnerstag, 10. März 2016, 12:30–12:45, H13

Design considerations of oxide-confined red emitting electrically pumped VECSEL — •Zhihua Huang, Michael Zimmer, Roman Bek, Hermann Kahle, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Centers SCoPE and IQST, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

Electrically pumped vertical external cavity surface-emitting laser (EP-VECSEL) is an attractive laser source for compact, low-cost, high-brightness applications. However, achieving high output power with fundamental mode operation is still a challenging work. Here, we present a detailed numerical analysis of EP-VECSEL structure at a wavelength of 665 nm with the focus on the current confinement and thermal management of AlGaInP based devices. We apply an electro-thermal model to treat effective conductivity and current distribution in multiple quantum wells (MQW) and distributed Bragg reflectors (DBRs). By analyzing the diameters and positions of oxide-aperture, different material composition, doping and thickness of current spreading layer (CSL), an improved structure with homogeneous current distribution and a trade-off between optical loss and device resistance is obtained. This configuration contains one oxide-aperture placed at the bottom and a 10 μm thick Al0.10GaInP CSL with medium n-doped concentration. For this optimized structure, simulation results indicate that the emission area in active region with a near Gaussian current distribution can be increased up to about 60 μm. This work provides a significant guideline for the design and optimization of EP-VECSEL.