Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 70: Semiconductor Lasers I

HL 70.3: Vortrag

Donnerstag, 10. März 2016, 10:00–10:15, H13

High-β Quantum Dot Micropillar Lasers under Optical Injection — •Elisabeth Schlottmann¹, Steffen Holzinger¹, Sören Kreinberg¹, Christian Schneider², Martin Kamp², Sven Höfling², Janik Wolters¹, and Stephan Reitzenstein¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Germany — ²Technische Physik, Julius-Maximilians-Universität Würzburg, Germany

Injection locking of standard semiconductor lasers, where the slave adapts to the master laser’s frequency is well known and is widely applied e.g. for laser stabilization. Here we go beyond the classical injection locking by exploring the quantum limit of injection locking by using a microscopic quantum dot laser as a slave. This device with a high quality factor of Q ∼ 70000 and a low mode volume exhibits high spontaneous emission enhancement due to the Purcell effect, enabling stable lasing at intra-cavity photon numbers as low as a few tens. In these devices, small structural asymmetries lead to bimodal emission and gain competition above threshold, resulting in different intensities for the two orthogonal polarization modes.

Under optical injection we achieve frequency locking, surprisingly accompanied by simultaneous strong emission at the slave’s solitary frequency. When the master laser and the stronger mode of the microscopic laser have the same polarization, the stronger mode is "partial injection locked" in a wide range of master-slave detuning. Simultaneously, the orthogonal polarized weak mode suffers a pronounced suppression of emission via gain coupling.