Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 79: Focus Session: Physics and Application of Emergent 2D-semiconductors and their Heterostructures 1

HL 79.8: Vortrag

Donnerstag, 10. März 2016, 13:00–13:15, H8

Enabling a new class of electronic devices using self-aligned nanodomain boundaries to open a charge transport gap in trilayer graphene — •Victor Aristov^1,2,3, Olga Molodtsova^1,4, Sergey Babenkov¹, Tsung-Wei Huang⁵, Askar Syrlybekov⁶, Mourad Abid⁷, Dmitry Marchenko⁸, Jaime Sánchez-Barriga⁸, Partha Sarathi Mandal⁸, Andrei Varykhalov⁸, Yuran Niu⁹, Barry Murphy⁶, Sergey Krasnikov⁶, Olaf Lübben⁶, Alexander Chaika^2,6, and Han-Chun Wu⁶ — ¹DESY, Hamburg, Germany — ²ISSP RAS, Chernogolovka, Russia — ³TU Bergakademie, Freiberg, Germany — ⁴ITMO, Saint Petersburg, Russia — ⁵National Taiwan University, Taipei, Taiwan — ⁶Trinity College, Dublin, Ireland — ⁷King Saud University, Riyadh, Saudi Arabia — ⁸BESSY, Berlin, Germany — ⁹Max-lab, Lund, Sweden

Trilayer graphene reveals unique electronic properties interesting for fundamental science and technological applications. The ability to achieve a high on-off current ratio is the central question in this field. We propose a simple method to achieve a current with high on-off ratio by opening a transport gap in trilayer graphene with self-aligned periodic nanodomain boundaries (NBs). Our low temperature transport measurements clearly demonstrate that the self-aligned periodic NBs induce a huge charge transport gap, more than 1.3 eV at 10 K. As a result of our study the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC/Si wafers was shown. This work was supported by the RAS, RFBR grants No 140200949 and 140201234, by SPP 1459 of DFG.