Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 82: Semiconductor Lasers II
HL 82.1: Vortrag
Donnerstag, 10. März 2016, 14:45–15:00, H13
Coaxial GaAs-AlGaAs core multishell nanowire lasers with epitaxial gain control — •Philipp Zimmermann1, Thomas Stettner1, Bernhard Loitsch1, Markus Döblinger2, Gerhard Abstreiter1, Gregor Koblmüller1, and Jonathan J. Finley1 — 1Walter Schottky Institut and Physik Department, Technische Uni- versität München, Garching, Germany — 2Department of Chemistry, Ludwig-Maximilians-Universität München, Munich, 81377, Germany
Semiconductor nanowires (NW) open up promising routes towards ultra-small, coherent light sources integrated on silicon. NWs act as natural Fabry-Perot cavities and have sufficient modal high reflectivity at the end facets, to facilitate lasing. Lasing has recently been demonstrated from conventional GaAs-AlGaAs core shell NWs up to room-temperature with emission in the near infrared [1]. For improved gain characteristics and lower threshold it is desirable to incorporate low-dimensional systems within the NW geometry. Here, we present single-mode lasing from radial single and multiple GaAs quantum wells (QWs) as active gain media in a GaAs-AlGaAs core-multishell NW. When subject to optical pumping lasing emission with a distinct s-shaped input-output characteristics and emission energies associated with the confined QWs are observed. The low temperature performance shows a reduced threshold power density for 7 coaxial QWs compared to a single QW in a NW with the same diameter, which confirms that gain characteristics can be optimized by epitaxial design [2]. [1] B. Mayer, et al. Nature Comm. 4, 2961 (2013). [2] T. Stettner, P. Zimmermann, et al., in review (2015).