Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 82: Semiconductor Lasers II

HL 82.3: Vortrag

Donnerstag, 10. März 2016, 15:15–15:30, H13

Characterization of Multimode Semiconductor Lasers by Intensity and Wavefront Analysis — •Inga-Maria Eichentopf and Martin Reufer — Hochschule Ruhr West, Institut Naturwissenschaften, Mülheim an der Ruhr, Germany

In recent years wavefront measurements using a Shack-Hartmann Sensor became an established way to analyze the beam quality of laser sources. With the detection of the wavefront deformation a change of the modal composition can be recorded instantaneously. While this method is well established for nearly Gaussian laser beams, the wavefront analysis of broadarea semiconductor lasers requires a detailed understanding of the composition of the laser modes. For our investigations we utilize lasers emitting light in the near infrared based on the material system of GaAs. For this type of laser the number and structure of optical modes is affected by thermal as well as electric effects inside the active medium. Spectral information is recorded over the position at the laser facet by means of a spectrometer. Moreover the intensity distribution of the optical near and far field is monitored for a variation of diode currents. To describe the structure of the laser modes the measured intensity distributions are associated with a composition of Hermite Gaussian Modes gained by a simulation software.