Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 89: Quantum Dots and Wires: Lasing
HL 89.3: Vortrag
Donnerstag, 10. März 2016, 16:30–16:45, H13
Strain induced tunable semiconductor nanowire lasers — •Maximilian Zapf1, Lisa Schade1, Robert Röder1, Karl Winkler2, Alois Lugstein2, and Carsten Ronning1 — 1Institute of Solid State Physics, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany — 2Institute of Solid State Electronics, TU Wien, Floragasse 7, A-1040 Vienna, Austria
Semiconductor nanowire (NW) lasers are a promising approach for the future miniaturization of optoelectronic devices. An emerging goal of research on nanoscale laser systems is the ability to tune the emission spectrally, which is achieved within semiconductor nanowires by inducing strain. Both the possibility of a strain induced bandgap modulation and laser oscillations in semiconductor NWs have been proven in several studies [Wei et al., Nano letters 12, 4595 (2012) ; Geburt et al., Nanotechnology 23, 365204 (2012)]. This has recently raised the idea of combining both efforts, aiming for lasing in strain tunable devices. Such devices were fabricated by placing NWs on a structured low refractive index substrate in a way that both NW ends are fixed, while the middle part is bridging a length tunable gap. Strain is applied by bending the sample macroscopically with a home built stage, which provides uniaxial strain to the gap area of the NW. Nanowire lasing measurements were conducted as a function of the applied strain, which lead to changes in the emission spectra as well as in the gain/loss ratio of the laser device. Furthermore, the device geometry enables the realization of strain switchable photonic waveguides.