Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 90: Poster III
HL 90.38: Poster
Donnerstag, 10. März 2016, 16:00–19:00, Poster A
Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation — •C. Kasper1, H. Kraus2,1, A. Sperlich1, D. Simin1, T. Makino2, S.-I. Sato2, T. Ohshima2, G. V. Astakhov1, and V. Dyakonov1,3 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2Japan Atomic EnergyAgency, Takasaki, Gunma, Japan — 3ZAE Bayern, 97074 Würzburg
Defects in silicon carbide (SiC) received growing attention in recent years[1,2,3,4], because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified.
An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal.
Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.
[1] H. Kraus et al., Nature Phys. 10, 157 (2014)
[2] D. J. Chrystle et al., Nature Mater. 14, 160 (2015)
[3] M. Widmann et al., Nature Mater. 14, 164 (2015)
[4] A. Lohrmann et al., Nature Comm. 6, 7783 (2014)