Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 90: Poster III

HL 90.39: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Generation of Nitrogen Vacancy Centers in Diamond by Focused Ion Implantation — •Johannes Lang, Boris Naydenov, and Fedor Jelezko — Institut für Quantenoptik, Universität Ulm, Germany

The color center in diamond formed by a substitutional nitrogen and an adjacent vacancy (NV center) is amongst the most studied defects in diamond and a promising candidate for different applications such as e.g. qubit spin registers in future quantum computers [1], or as magnetic and electric field sensors [2]. The targeted creation of these NVs is essential for the described applications [3]. We present a UHV-setup for low energy focused ion implantation of nitrogen in order to create NV centers. By adjusting the implantation energy and fluence, the generation depth of up to 20 nm below the surface of the diamond substrate, as well as the NV density and position can be controlled.

[1] J. Scheuer et al., New J. Phys. 16 093022 (2014) [2] C. Müller et al., Nat. Comm., 5 4703 (2014) [3] J. Meijer et al., Appl. Phys. Lett. 87, 261909 (2005)