Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 91: Poster IIIb (Joint session of DS and HL, organized by HL)
HL 91.2: Poster
Donnerstag, 10. März 2016, 16:00–19:00, Poster A
Elastic properties and strain-tuning of single-layer phosphorene — Daniel Midtvedt1,2, Caio H. Lewenkopf3, and •Alexander Croy1 — 1Max Planck Institute for the Physics of Complex Systems, Dresden, Germany — 2Chalmers University of Technology, Göteborg, Sweden — 3Universidade Federal Fluminense, Niterói, Brazil
Phosphorene (or black phosphorus) has attracted a lot of interest in recent times. Its unusual puckered structure leads to interesting anisotropic elastic and electronic properties with promising potential applications. Moreover, single-layer phosphorene is a direct semiconductor, which makes this material a candidate to be used in (opto)electronic devices. An important question in this context is the strain-dependence of the electronic band-gap.
We calculate the elastic properties of single-layer phosphorene using the valence-force model of Kaneta et al [1] and the approach given in [2], which accounts for the non-Bravais lattice structure of the material. Using a two-orbital tight-binding model [3], we study the strain-induced band-gap modification. We compare our results with recent ab initio calculations.
[1] C. Kaneta et al, Solid State Commun. 44, 613 (1982).
[2] D. Midtvedt et al, arXiv:1509.02365.
[3] J.-W. Jiang and H. S. Park, Phys. Rev. B91, 235118 (2015).