Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 92: Postersession DS/HL
HL 92.27: Poster
Donnerstag, 10. März 2016, 16:00–19:00, Poster A
Optical and Structural Properties of Thin Films of Difluoro-anthradithiophene — •Timo Storzer1, Alexander Hinderhofer1, Giuliano Duva1, Alexander Gerlach1, John E. Anthony2, and Frank Schreiber1 — 1Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen — 2Department of Chemistry, University of Kentucky, Lexington, Kentucky, 40506, USA
We report on the optical and structural properties of the novel functionalized anthradithiophene derivative difluoro-anthradithiophene (diF-ADT). Anthradithiophene (ADT) is isoelectronic with pentacene, which is one of the most studied organic semiconductors. A fluorinated anthradithiophene derivative with (triethylsilyl)ethynyl side groups (diF-TES-ADT) has been studied in recent years and showed high charge carrier mobilities in solution-cast thin-film transistors [1]. We present a study of thin films of diF-ADT prepared by organic molecular beam deposition (OMBD). We show how the growth conditions (e.g. substrate temperature, deposition rate) influence the optical and structural properties based on UV-Vis absorption, spectroscopic ellipsometry, photoluminescence (PL), X-ray reflectivity (XRR) and AFM measurements.
[1] Gundlach, D. J.; Anthony, J. E. et al., Nat. Mater. 2008, 7, 216.