Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 96: Magnetic Semiconductors

HL 96.2: Vortrag

Freitag, 11. März 2016, 09:45–10:00, H13

Application of ion beams to fabricate and tune ferromagnetic semiconductors — •Shengqiang Zhou — Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany

In this talk, I will show how ion beams can be used in fabricating and understanding ferromagnetic semiconductors. First, ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LTMBE) approach [1-7]. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn. Both GaMnP and InMnP films show the signature of ferromagnetic semiconductors and an insulating behavior. Second, we use helium ion irradiation to precisely compensate holes in ferromagnetic semiconductors while keeping the Mn concentration constant [8-10]. By this approach, one can tune the magnetic properties of ferromagnetic semiconductor as well as pattern a lateral structure. It also provides a route to understand how carrier-mediated ferromagnetism is influenced by localization.

[1] M. Scarpula, et al. PRL 95, 207204 (2005); [2] D. Bürger, S. Zhou, et al., PRB 81, 115202 (2010); [3] S. Zhou, et al., Appl. Phys. Express 5, 093007 (2012); [4] M. Khalid et al., PRB 89, 121301(R) (2014); [5] Y. Yuan, et al, IEEE Trans. Magn. 50, 2401304 (2014); [6] Y. Yuan, et al. JPD 48, 235002 (2015); [7] S. Zhou, JPD 48, 263001 (2015); [8] Lin Li, et al., JPD 44 099501 (2011); [9] Lin Li, et al., NIMB, 269, 2469 (2011); [10] S. Zhou, et al. PRB, in revision (2015).