Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 96: Magnetic Semiconductors

HL 96.7: Vortrag

Freitag, 11. März 2016, 11:30–11:45, H13

Defect induced magnetism in SiC — •Shengqiang Zhou — Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany

Defect-induced magnetism is attracting intensive research interest. It not only challenges the traditional opinions about magnetism, but also has some potential applications in spin-electronics. SiC is a new candidate for the investigation of defect-induced ferromagnetism after graphitic materials and oxides due to its high material purity and crystalline quality [1, 2]. In this contribution, I will review our comprehensive investigation on the structural and magnetic properties of ion implanted and neutron irradiated SiC sample.

The magnetization in ion irradiated SiC can be decomposed into paramagnetic, superparamagnetic and ferromagnetic contributions [3,4]. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. By combining X-ray magnetic circular dichroism and first-principles calculations, we clarify that p-electrons of the nearest-neighbor carbon atoms around divacancies are mainly responsible for the long-range ferromagnetic coupling [5]. Thus, we provide a correlation between the collective magnetic phenomena and the specific electrons/orbitals.

[1] APL 98, 222508 (2011); [2] PRB 90, 214435 (2014); [3] PRB 89, 014417 (2014); [4] PRB, 92, 174409 (2015); [5] Sci. Rep., 5, 8999 (2015).