HL 98: Focus Session: Functionalization of Semiconductors III
Freitag, 11. März 2016, 09:30–11:45, H16
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09:30 |
HL 98.1 |
MOVPE growth of InGaAs quantum dots in functionalized semiconductor structures — •Matthias Paul, Jan Kettler, Caterina Clausen, Katharina Zeuner, Fabian Olbrich, Michael Jetter, and Peter Michler
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10:00 |
HL 98.2 |
Temperature-stable large-bandwidth directly modulated 1.5 µ m quantum dot lasers — Saddam Banyoudeh, •Alireza Abdollahinia, and Johann Peter Reithmaier
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10:15 |
HL 98.3 |
Nitrogen incorporation in GaAs using DTBAA, a novel N precursor with no direct C-N bond — •Eduard Sterzer, Andreas Beyer, Lennart Duschek, Lukas Nattermann, Benjamin Ringler, Bernhard Leube, Andreas Stegmüller, Ralf Tonner, Carsten von Hänisch, Wolfgang Stolz, and Kerstin Volz
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10:30 |
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30 min. Coffee Break
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11:00 |
HL 98.4 |
GaN-on-Si(hkl) epitaxy: physics and chemistry — •Andre Strittmatter and Armin Dadgar
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11:30 |
HL 98.5 |
Atomic-scale investigation of photovoltaic GaN/Si(111) hetero-interfaces using photoexcited scanning tunneling microscopy and spectroscopy — •Fei-Man Hsiao, Yen-Chin Huang, Bo-Chao Huang, Philipp Ebert, and Ya-Ping Chiu
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