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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 99: Gallium Nitride: Devices

Freitag, 11. März 2016, 09:30–12:30, H17

09:30 HL 99.1 Hauptvortrag: Multifunctional 3D GaN: strategies for solid state lighting, electronics and sensing — •Andreas Waag, J. Hartmann, Hao Zhou, S. Fündling, F. Steib, M. Mohajerani, Feng Yu, H.-H. Wehmann, A.E. Gad, D. Prades, D. Bichler, B. Huckenbeck, T. Schimpke, M. Mandl, I. Stoll, A. Avramescu, M. Strassburg, and H.-J. Lugauer
10:00 HL 99.2 Photon Statistics of high–β Nitride Nanobeam Lasers — •Stefan T. Jagsch, Noelia Vico Triviño, Gordon Callsen, Stefan Kalinowski, Ian M. Rousseau, Jean-François Carlin, Raphaël Butté, Axel Hoffmann, Nicolas Grandjean, and Stephan Reitzenstein
10:15 HL 99.3 Blue LED optimization based on a MOCVD growth parameter sensitivity study — •Michael Heuken, Egidijus Sakalauskas, Xiaojun Chen, Olivier Feron, Hannes Behmenburg, Ralf Leiers, Markus Luenenbuerger, Peter Lauffer, Adam Boyd, and Johannes Lindner
10:30 HL 99.4 Impact of Design on the Optical Polarization of AlGaN Quantum Well Deep UV Light Emitters — •Christoph Reich, Martin Feneberg, Martin Guttmann, Frank Mehnke, Tim Wernicke, and Michael Kneissl
10:45 HL 99.5 Radiative recombination and parasitic luminescence in AlGaN-based UVC-LEDs — •Simon Kapanke, Johannes Enslin, Frank Mehnke, Christian Kuhn, Martin Guttmann, Christoph Reich, Ute Zeimer, Tim Wernicke, Markus Weyers, and Michael Kneissl
  11:00 30 min. Coffee Break
11:30 HL 99.6 Carbon doping of GaN using propane for compensation of n-type GaN layers — •Andreas Lesnik, Marc Hoffmann, Jonas Hennig, Aqdas Fariza, Jürgen Bläsing, Hartmut Witte, Armin Dadgar, and André Strittmatter
11:45 HL 99.7 Impact of buffer structure on the performance of AlInN/GaN based FETs grown on Si (111) — •Jonas Hennig, Armin Dadgar, Jürgen Bläsing, Annette Dietz, and André Schrittmatter
12:00 HL 99.8 Smooth and uniform Al0.8Ga0.2N:Si superlattice cladding layers for UV-C laser diodes — •C. Kuhn, T. Simoneit, M. Martens, F. Mehnke, J. Enslin, K. Bellmann, A. Knauer, T. Wernicke, M. Weyers, and M. Kneissl
12:15 HL 99.9 Impact of a GaN:Ge/GaN based distributed Bragg reflector on the optical properties of an InGaN LED structure — •Andreas Voß, Gordon Schmidt, Christoph Berger, Stefan Sterling, Frank Bertram, Armin Dadgar, André Strittmatter, and Jürgen Christen
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DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg