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MA: Fachverband Magnetismus
MA 11: Magnetic Thin Films I
MA 11.2: Talk
Monday, March 7, 2016, 15:15–15:30, H33
Physical and electronic characterization of nanostructured MnSi — •Nico Steinki1, David Schroeter1, Patryk Krzysteczko2, Alexander Fernándes Scarioni2, Hans Werner Schumacher2, Stefan Süllow1, and Dirk Menzel1 — 1Institut für Physik der Kondensierten Materie, TU Braunschweig, Germany — 2Physikalisch Technische Bundesanstalt, Braunschweig, Germany
The non-centrosymmetric B20 chiral magnet MnSi shows intriguing properties involving the existence of skyrmions. Recently, we have started production and physical characterization of MnSi thin film samples [1,2] revealing considerable changes in the magnetic phase diagram compared to bulk material [3]. To further characterize the skyrmionic phase in MnSi under geometrical constraints, we have proceeded by nanostructuring the MnSi thin films by electron beam lithography. In particular, Hall bar structures with different widths down to 100 nm have been produced. On these, we have measured the Hall effect and magnetoresistance between 1.5 and 80 K in a magnetic field up to 8 T, thus covering the temperature and field regime of the skyrmionic phase. Here, we will present first results regarding the characterization of the structures and the comparison in terms of the electronic transport properties between thin films and our nanostructures.
[1] J. Engelke et al., J. Phys. Soc. Jpn. 81, 124709 (2012)
[2] J. Engelke et al., Phys. Rev. B 89, 144413 (2014)
[3] D. Menzel et al., J. Kor. Phys. Soc. 62, 1580 (2013)