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MA: Fachverband Magnetismus
MA 11: Magnetic Thin Films I
MA 11.3: Talk
Monday, March 7, 2016, 15:30–15:45, H33
Turn on/off the high-temperature ferromagnetism in Si1-xMnx thin films through Mn-ion implantation — •Parul Pandey1, Vladimir Rylkov2, Ye Yuan1, Anna Semisalova1, Vladimir Mikhalevskiy3, Oleg Novodvorskii3, Victor Tugushev2, Manfred Helm1, and Shengqiang Zhou1 — 1HZDR, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 2NRC Kurchatov Institute, Moscow, Russia — 3ILIT RAS, Shatura, Russia
Silicon based alloys with Mn-ions exhibits complex electric and magnetic phenomena which have direct implications in the contemporary microelectronic technology. Though, Si1-xMnx shows high-temperature ferromagnetism (TC) at low Mn content x~0.05-0.1, but the small solubility of Mn in Si leads to the formation of MnSi1.7 nanoparticles, which drives the system in an inhomogeneous phase and makes it irrelevant for the technological applications. However, a high Mn content screens the precipitation of such inhomogeneous phases. In this context, a set of thin films of Si1-xMnx (x=0.44-0.57) were prepared by pulsed laser deposition technique on Al2O3 (0001) substrate. We have found room-temperature ferromagnetism and a large moment for Si0.43Mn0.57 film as compared to the rest of samples. But, surprisingly, TC of Si0.43Mn0.57 drastically decreases from 300K to 40K as the Mn content was increased in the film through the ion-implantation process. In contrast, the stoichiometric film Si0.5Mn0.5 exhibits a huge increase in the moment by one-order in magnitude (with TC from 50K to 300K) after Mn-ion implantation.