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MA: Fachverband Magnetismus

MA 44: Spininjection / Spin currents in heterostructures

MA 44.1: Talk

Thursday, March 10, 2016, 15:00–15:15, H31

room temperature spin transport in n-type Ge — •Masashi Shiraishi¹, Sergey Dushenko^1,2, Yuichiro Ando¹, Teruya Shinjo¹, and Maksym Myronov³ — ¹Kyoto University, Japan — ²Osaka University, Japan — ³Univ. Warwick, UK

After the success of room temperature (RT) spin transport in Si [1,2] and RT operation of spin MOSFET using Si [3,4], the next milestone in semiconductor spintronics was set to realization of RT spin transport in Ge because carrier mobility of Ge is larger than that in Si. Much effort has been dedicated for the realization, the temperature range of the spin transport in Ge was limited below 225 K when an electrical method was used [5,6]. We introduced the other potential method for spin injection and transport in semiconductor, i.e., dynamical spin pumping. In this presentation, we report on RT spin transport in n-type Ge, where spin diffusion length is estimated to be ca. 600 nm [7]. Temperature dependence of the spin diffusion length tells us that the spin relaxation is induced by impurity scattering. The detail is discussed in the presentation.

[1] T. Suzuki, M. Shiraishi et al., Appl. Phys. Express 4, 023003 (2011). [2] E. Shikoh, M. Shiraishi et al., Phys. Rev. Lett. 110, 127201 (2013). [3] T. Sasaki, M. Shiraishi et al., Phys. Rev. Applied 2, 034005 (2014). [4] T. Tahara, M. Shiraishi et al., Appl. Phys. Express 8, 113004 (2015). [5] Y. Zhou et al., Phys. Rev. B84, 125323 (2011). [6] K. Kasahara et al., Appl. Phys. Express 7, 033002 (2014). [7] S. Dushenko, M. Shiraishi et al., Phys. Rev. Lett. 114, 196602 (2015).