Regensburg 2016 – scientific programme

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MA: Fachverband Magnetismus

MA 45: Focus: Disorder Engineering as a Tool for Material Science

MA 45.1: Invited Talk

Thursday, March 10, 2016, 15:00–15:30, H32

Charge carrier scattering and electronic transport in graphene — •Mikhail Katsnelson — Radboud University, Nijmegen, Netherlands

High electron mobility in graphene is one of its most interesting properties for potential applications. Despite intensive efforts, both experimental and theoretical, we still have no complete understanding of main electron scattering mechanisms and main limiting factors restricting the mobility. It is clear that a long-range scattering is important since short-range scatterers with radius of potential smaller than the electron wavelength are irrelevant for massless Dirac fermions. Three most probable candidates are charge impurities, scattering by elastic deformations created by frozen ripples and other defects, and resonant scattering centers (the last case also deals with long-range effects due to divergence of the scattering length). I review a theory of these mechanisms, together with relevant experimental results and first-principle calculations. I discuss also peculiarities of electron transport in bilayer graphene and temperature dependence of resistivity for freely suspended graphene samples. In the latter case, two-phonon processes involving bending mode give probably the main contribution. I will consider also theory of minimal conductivity in graphene and discuss the role of electron-electron interactions. Electronic transport in graphene on boron nitride and the role of moire pattern formed in this case will be also reviewed.