Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 51: Magnetic Semiconductors

MA 51.1: Vortrag

Freitag, 11. März 2016, 09:30–09:45, H13

A systematic investigation of the magnetic anisotropy of III-Mn-V ferromagnetic semiconductors — •Chi Xu^1,3, Ye Yuan^1,3, Maciek Sawicki², Manfred Helm^1,3, and Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — ²Institute of Physics, Polish Academy of Sciences, Warszawa, Poland — ³Technische Universität Dresden, D-01062 Dresden, Germany

As one of the most important physical properties of dilute ferromagnetic semiconductors (DFS), the magnetic anisotropy exhibits a complicated character and its origin is under continuous discussion [1]. Due to different physical parameters (e.g. band gap, lattice constant) in various Mn doped III-V DMSs, various magnetic anisotropies are expected and could be tailored by Mn or hole concentrations [2,3]. To investigate this in greater detail, we prepare three typical III-Mn-V DFSs, InMnAs, GaMnAs, and GaMnP by ion implantation and pulsed laser annealing, which is a complementary approach to low-temperature molecular beam epitaxy. We report a systematic investigation on the magnetic anisotropy with the aim to understand its physical origin.

[1]. T. Dietl et al., Rev. Mod. Phys. 86, 187-251 (2014) [2]. M. Sawicki et al., Phys. Rev. B 70, 245325 (2004) [3]. C. Bihler et al., Phys. Rev. B 78, 045203 (2008)