Regensburg 2016 – wissenschaftliches Programm

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MI: Fachverband Mikrosonden

MI 7: Poster: Microanalysis and Microscopy

MI 7.9: Poster

Mittwoch, 9. März 2016, 18:00–20:00, Poster E

Stress Analysis in Semiconductor Devices by Kelvin Probe Force Microscopy — •Evgeniya Sheremet1, Florian Fuchs1,3, Soumya D. Paul1, Sven Haas1, Dietmar Vogel2, Raul D. Rodriguez1, Andreas Zienert1, Jörg Schuster2, Danny Reuter1, Thomas Geßner1, Dietrich R.T. Zahn1, and Michael Hietschold11Technische Universität Chemnitz, Chemnitz, Germany — 2ENAS Fraunhofer, Chemnitz, Germany — 3Helmholtz-Zentrum Dresden-Rossendorf and Center for Advancing Electronics Dresden (cfaed), Dresden, Germany

The determination of built-in strain in semiconductor devices with nanometer spatial resolution and high sensitivity is needed for the characterization of nanoscale electronic devices. Kelvin probe force microscopy (KPFM) is an atomic force microscopy-based method that provides the spatially resolved surface potential at the sample surface, fulfilling the requirements on resolution and sensitivity. The contrast observed in KPFM imaging is often attributed to stress, but there are only a few reports on the application of KPFM for quantitative stress analysis [1]. In this contribution we focus on the application of KPFM for analysis of stress in silicon devices, such as copper through silicon vias and silicon membranes. The experimental results are compared with density functional theory calculations of strained silicon. This work provides critical insights into the quantitative determination of stress at the nanoscale that so far has gone largely unnoticed in the scanning probe microscopy community.

[1] W. Li, D.Y. Li, J. Appl. Phys. 99, 073502 (2006).

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