Regensburg 2016 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 26: Poster session II

MM 26.10: Poster

Dienstag, 8. März 2016, 18:30–20:30, Poster B3

Si diffusion and precipitation in Al during the Al-induced layer exchange (AlILE) process — •Simon M. Kraschewski, Benjamin Butz, and Erdmann Spiecker — Lehrstuhl für Mikro- und Nanostrukturforschung & Center for Nanoanalysis and Electron Microscopy (CENEM), Universität Erlangen-Nürnberg, Erlangen, Germany

Al-induced layer exchange (AlILE) is a promising route of fabrication for polycrystalline intrinsic Si seed layers from an amorphous state at low temperatures. The process makes use of the phenomenon of metal-induced crystallization and is characterized by a layer exchange in a stack of Si/oxide/Al on glass substrate at temperatures in the range of 180-550 ^∘C. According to the current understanding of the process, atomic Si diffuses into the Al layer where it becomes oversaturated and forms crystalline precipitates. The precipitates grow laterally (up to several 10th of µ m) thus replacing the Al which is "pushed up" into the original a-Si layer. Until now no analytical SEM/TEM studies have been performed in order to verify the Si content in the Al layer during the process.

First results on ex situ quenched samples with Si show a vertical gradient of Si in the Al layer with a range of 2-5 at%, which is much higher than expected from the phase diagram (round about 1 at%). Additionally the Si in the Al layer distribution seems to be independent from interfaces and grain boundaries.