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O: Fachverband Oberflächenphysik

O 22: Organic-Inorganic Hybrid Systems and Organic Films

O 22.11: Poster

Montag, 7. März 2016, 18:15–20:30, Poster E

Functionalization of Gallium nitride surfaces — •Stefan Brackmann^1,2,3, Sebastian Hietzschold^1,2,3, Robert Lovrincic^1,2, and Wolfgang Kowalsky^1,2,3 — ¹InnovationLab, Heidelberg, Germany — ²IHF, TU Braunschweig, Germany — ³KIP, Heidelberg University, Heidelberg, Germany

Gallium nitride (GaN) is an often used III-V semiconductor due to its favorable optoelectronic properties. GaN nanowires with different doping domains are a promising candidate for blue LEDs. However the material suffers from surface states that are detrimental to its electronic properties 1. One approach to mend the problematic surface states is passivation with different self-assembled monolayers (SAMs) such as amines, tiols and phosphonates. Here, we study GaN surfaces with atomic force microscopy (AFM), ambient Kelvin probe (KP), Surface photo voltage (SPV), UV-Vis spectroscopy and goniometry. Clean (0001) n-type GaN surfaces are compared with functionalized surfaces. Modification of the surface changed the work function as well as the SPV by several 100mV. We will discuss the impact of our surface functionalizations on the band diagram and charge carrier recombination.

1. Reshchikov, M. a., Visconti, P. & Morkoc*, H. Appl. Phys. Lett. 78, 177 (2001).