Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: Graphene: Electronic Properties, Structure and Substrate Interaction
O 44.4: Poster
Dienstag, 8. März 2016, 18:15–20:30, Poster E
Twisted graphene layers on metals investigated by scanning tunneling microscopy — •Sabina Simon, Philipp Leicht, Julia Tesch, Luca Gragnaniello, and Mikhail Fonin — Department of Physics, University of Konstanz, 78457 Konstanz, Germany
Epitaxial growth on metal substrates is known to be one of the most powerful approaches in producing large-scale high-quality monolayer graphene, yet it remains a major challenge to realize the growth of multilayers.
This work is devoted to the investigation of multilayered graphene systems epitaxially grown on metallic substrates. Firstly, we discuss the local electronic properties of twisted graphene flakes on Au(111). The electronic properties of such twisted bilayer graphene areas show an increased accessibility of atomically resolved graphene features, a shift of the Dirac energy closer to EF with a residual doping of 85 meV and a reduced Fermi velocity of (0.8±0.1)·106 m/s. Secondly, we present the results of the investigation of growth of large scale graphene bilayers on Ir(111) and report on their structure and electronic properties.