Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 54: 2D Materials II: Growth
O 54.4: Vortrag
Mittwoch, 9. März 2016, 11:15–11:30, S053
TFT Fabrication Based on Liquid Exfoliated MoS2 Flakes — •Xiaoling Zeng1, Sonia Metel2, 3, Valeria Nicolosi2, 3, 4, and Veit Wagner1 — 1Jacobs University Bremen, Campus Ring 1, 28759 Bremen, Germany — 2School of Chemistry, Trinity College Dublin, Ireland — 3CRANN, Trinity College Dublin, Ireland — 4School of Physics, Trinity College Dublin, Ireland
There is a large interest in establishing cheap, scalable processes for producing low dimensional semiconducting dichalcogenide films for electronic application. In this work, well exfoliated MoS2 dispersions were prepared through two step liquid phase exfoliation process with N-methyl-pyrrolidone (NMP) and Isopropanol (IPA). The obtained exfoliated MoS2 flakes were characterized by microscopy (TEM and SEM), Uv - Vis and Raman spectroscopy.
Bottom gate thin film transistors (TFTs) based on exfoliated MoS2 film were fabricated by using spray coating techniques. The deposition process was optimized to get uniform and percolated MoS2 film with different thicknesses. Transistors show only minor conductivity directly after layer deposition. However, depositing additional PMMA layer on top shows large improvement in electrical characteristics, i.e. switching behavior with changing gate voltage. Interpretation is that the PMMA layer brings the initially separated flakes into contact and enables proper percolation. Further investigation found that the thickness of PMMA influences the electrical properties. This low-cost and scalable solution-based fabrication process will promote the application of dichalcogenides in future nanoelectronic devices.