Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 54: 2D Materials II: Growth
O 54.8: Vortrag
Mittwoch, 9. März 2016, 12:15–12:30, S053
Tuning the physical properties of MoS2 membranes by organophosphonate interfacial chemistry — •Susanne Schwarzwälder1, Réka Csiki1, Eric Parzinger1, Jeffrey Schwartz2, Alexander Holleitner1, Martin Stutzmann1, Ursula Wurstbauer1, and Anna Cattani-Scholz1 — 1Walter Schottky Institut and Physik Department, Technische Universität München, Germany — 2Princeton University, New Jersey, USA
One of the most prominent members of the 2D material family is the transition metal dichalcogenide MoS2, due to its natural occurrence and its promising potential applications in nanoelectronic and optoelectronic devices [1]. Interfacial chemistry strongly influences the interaction of molecularly thin semiconducting membranes with the underlying substrate, hence a suitable silicon surface functionalization can be employed for improving the performance of MoS2-based devices [2]. Our work focuses on the investigation of surface functionalization using homogeneous organophosphonate self-assembled monolayers (SAMs) covalently bonded to SiO2. In particular, the interaction of single layer (SL) MoS2 with SAMs based on four different aromatic phosphonic acids are investigated. Modulation of the intrinsic n-type doping of SL-MoS2 via charge transfer with aromatic SAMs is suggested by a shift in the Raman-active out-of plane vibrational mode A1g, emphasizing the importance of interfacial interactions in MoS2-based nanodevices.
[1] R. Ganatra, Q. Zhang, ACS Nano 8, 4074 (2014).
[2] S. Najmaei et al., Nano Lett. 14, 1354 (2014).