Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 61: Graphene II: Adsorption, Intercalation and Doping
O 61.11: Vortrag
Mittwoch, 9. März 2016, 17:30–17:45, S053
Transformation of metallic boron into substitutional dopants in graphene on 6H-SiC(0001) — •Jessica Sforzini1,2, Mykola Telychko3,4, Ondrej Krejcio3,4, Martin Vondracek5, Martin Svec3, Francois Bocquet1,2, and Stephan Tautz1,2 — 1Peter Gruenberg Institut (PGI-3), Forschungszentrum Juelich, 52425 Juelich, Germany — 2Juelich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, 52425 Juelich, Germany — 3Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, CZ-16200 Prague, Czech Republic — 4Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, Praha 8, Czech Republic — 5Institute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 10, CZ-18228 Prague, Czech Republic
We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6H-SiC(0001). Photoemission experiments reveal the presence of two chemical states, namely boron in the uppermost SiC bilayers and boron substituted in both the graphene and buffer layer lattices. We demonstrate the participation of the dopant in the π* electron system of graphene by the presence of the π* resonance in the near edge x-ray adsorption fine structure (NEXAFS) recorded at the B K-edge. The experimental fundings are supported by NEXAFS simulations.