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Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 83: Heterostructures and Interfaces

O 83.4: Vortrag

Donnerstag, 10. März 2016, 10:15–10:30, H17

How can band offsets in III-V nanowires be determined correctly by scanning tunneling spectroscopy? — •Philipp Ebert1, Pierre Capiod2, Tau Xu2, Adrian Díaz Álvarez2, Xiang-Lei Han2, David Troadec2, Jean-Philippe Nys2, Maxime Berthe2, Liverios Lymperakis3, Jörg Neugebauer3, Isabelle Lefebvre2, Sébastien Plissard2,4, Philippe Caroff2,5, Rafal Dunin-Borkowski1, and Bruno Grandidier21Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — 2IEMN, CNRS, UMR 8520, Dept. ISEN, 59046 Lille, France — 3Max-Planck Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany — 4CNRS-LAAS, Univ. de Toulouse, 31400 Toulouse, France — 5Dept. of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200, Australia

Scanning tunneling spectroscopy (STS) allows the determination of band gaps and band offsets at interfaces between different polytypes or materials of III-V semiconductor nanowires (NWs). However, STS is mostly wrongly interpreted in literature: The commonly high step density at the sidewall surfaces of III-V NWs leads to extrinsic surface states that induce a pinning of the Fermi energy within the fundamental band gap. Since the pinning level is different on every polytype/material, the relative band edge positions between different NW segments are extrinsically determined. Therefore, we developed a new methodology to accurately determine band offsets between different NW segments by using a thin overgrown shell with wider band gap, assuring identical pinning of the overgrown and the pure segment.

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