Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 89: Oxides and Insulator Surfaces II
O 89.9: Vortrag
Donnerstag, 10. März 2016, 17:15–17:30, H4
Growth and morphological characterization of thin vanadium dioxide films — •Mirco Schulz, Jon-Olaf Krisponeit, Jan Ingo Flege, and Jens Falta — Universität Bremen, Bremen, Germany
Vanadium dioxide exhibits a metal-insulator transition near room temperature, comprising a rich phenomenology that is still not fully understood. Close to the transition, the system responds sensitively to uniaxial substrate-induced stress, resulting in a wide variation of the transition temperature. In this contribution, thin VO2 films were grown on TiO2(001) and TiO2(110) substrates by molecular beam epitaxy. Two different growth methods were used: first, vanadium evaporation under O2 ambient and, second, cyclic vanadium deposition and post-annealing in O2, following an approach by J. W. Tashman et al. [1]. For both methods the prevalence of the V4+ oxidation state was confirmed by x-ray photoelectron spectroscopy. The surface structure was analyzed with low energy electron diffraction, indicating an epitaxial growth on the substrate and good crystallinity of the films. While scanning tunneling microscopy revealed continuous films of VO2 on both substrates, we found faceting in the case of (110) substrate orientation, but terraces on (001) substrates.
[1] J. W. Tashman et al., Appl. Phys. Lett. 104, 063104 (2014).