Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 11: Focus Session: Single Particle Sources for Electronic Devices II
(Joint session of HL and TT organized by HL)
TT 11.2: Vortrag
Montag, 7. März 2016, 15:15–15:30, H10
Dopant controlled single electron pumping through a metallic quantum dot in silicon — •Tobias Wenz1, Frank Hohls1, Xavier Jehl2, Sylvain Barraud3, Girts Barinovs4, Jevgeny Klochan4, and Vyacheslavs Kashcheyevs4 — 1Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany — 2University Grenoble Alpes and CEA-INAC, F-38000 Grenoble, France — 3University Grenoble Alpes and CEA-Leti-Minatec, F-38000 Grenoble, France — 4Faculty of Physics and Mathematics, University of Latvia, LV 1002 Riga, Latvia
Single electron pumps produce a quantized current by transferring an integer number of electrons n each cycle with a high frequency f, so that the current is I = n e f [1], where e is the electron charge, enabling a redefinition of the ampere by fixing the value of e. Commonly, single electron pumps utilize gate-defined quantum dots to create a quantized current. In this work, we investigate a silicon nanowire produced from an industrial CMOS process and take advantage of single phosphorus dopants located in both barriers of a gate-defined quantum dot. Due to their strongly localized potential wells, single dopants have large charging energies and sharp resonances that strongly influence the coupling of the main quantum dot to source and drain. By modulating the gates with suitable RF signals to switch the coupling on and off a quantized current can be generated. The operation principle can be modeled using simple assumptions and allows the study of dynamic effects in a coupled single dopant/metallic quantum dot system.
[1] Kaestner and Kashcheyevs, Rep. Prog. Phys. 78, 103901 (2015)