Regensburg 2016 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 17: Low-Dimensional Systems: Oxide Hetero-Interfaces

TT 17.2: Vortrag

Montag, 7. März 2016, 15:15–15:30, H22

Gating effect in a lateral LaAlO₃/SrTiO₃ 2DEG - SrTiO₃ heterostructure — •Alexander Müller¹, Mohsin Minhas¹, Hans-Helmuth Blascheck¹, Bodo Fuhrmann², and Georg Schmidt^1,2 — ¹Fachbereich Physik, Martin-Luther Universität Halle-Wittenberg, 06099 Halle (Saale), Germany — ²Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther Universität Halle-Wittenberg, 06099 Halle (Saale), Germany

We have successfully patterned the two dimensional electron gas which forms at the interface between LaAlO₃ (LAO) and SrTiO₃(STO) [1] using electron beam lithography and reactive Ion Etching (RIE). With this process small gaps between electrodes were created which at low temperature show the characteristics of the channel of a tunneling field effect transistor. An additional side gate can be used to modulate the I/V characteristics and thus create a true three terminal device. At low temperatures the transistor exhibits a transconductance of 32 µA/V for a channel width of 4 µm and a sub threshold swing of 9 mV/dec.
A. Ohtomo, H.Y. Hwang, Nature 427, 6973 (2004)