Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 23: Quantum Information Systems
(Joint session of HL, MA, O and TT organized by HL)
TT 23.8: Vortrag
Dienstag, 8. März 2016, 11:45–12:00, H15
Electrical Charge State Control of Single Defects in Silicon Carbide — •Matthias Widmann1, Sang-Yun Lee1, Matthias Niethammer1, Ian Booker2, Takeshi Ohshima3, Nguyen Tien-Son2, Adam Gali4, Erik Janzén2, and Jörg Wrachtrup1 — 13.Phys. Institut, Stuttgart — 2Dep. of Phys., Linköping — 3Japan AEA, Takasaki — 4Wigner Res.C f.Phys., Budapest
Atomic scale defects in solids attracted a lot of interest over the last decade, because their spins can be used to detect magnetic- and electric fields and temperature with high sensitivity. They are also promising candidates as qubits and used for quantum information processing. Mostly color centers in diamond, e.g. NV centers, and impurities in silicon are used in the past. A single NV spin can be read out optically at room temperature. Electrical readout is possible, but remains challenging. Spins in silicon can be driven and read out electrically very well, however require low temperatures. Spins in silicon carbide (SiC) can overcome these drawbacks. Their spins can be driven and detected both optically[1] and electrically at ambient conditions. SiC electrical properties are promising since integrated single spins in modern electronic devices will allow manipulation of spins in various manners. Here we extend our single defect studies[1] towards electrical manipulation of its charge state in order to get better insight about creation of isolated defects with desired spin quantum number. We will also present how the charge state control affects spin control, and discuss possible applications. 1. M. Widmann et al.,Nat. Mat. 14 (2015)