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Regensburg 2016 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 43: Correlated Electrons: f-Electron & Heavy Fermion Systems

TT 43.12: Vortrag

Mittwoch, 9. März 2016, 12:45–13:00, H20

Thin Film Fabrication and Transport Properties of the Heavy Fermion Oxide LiV2O4 — •Ulrike Niemann1, Daigorou Hirai2, and Hidenori Takagi1,2,31Max Planck Institute for Solid State Research, Stuttgart, Germany — 2University of Tokyo, Tokyo, Japan — 3Institute for Functional Matter and Quantum Technologies, University of Stuttgart, Stuttgart, Germany

The spinel compound LiV2O4 is well-known for its heavy fermion behaviour, although it contains no f-electron bands [1],[2]. This unexpected behaviour has been a subject of several studies, but the origin of it is still not fully understood. In this study, we successfully fabricated single crystalline epitaxial thin film of LiV2O4 on SrTiO3, LSAT and MgO substrates, using a pulsed laser deposition technique. By changing film thickness and substrate materials, dimensionality and epitaxial strain was controlled. The formation of an epitaxially grown LiV2O4 phase has been confirmed by X-ray diffraction measurements. LiV2O4 films on MgO were found to be strained, due to the small lattice mismatch, in contrast to fully relaxed films on SrTiO3.The heavy fermion behaviour of bulk LiV2O4 at low temperatures is well reproduced in thick enough (≈ 7 nm) films on SrTiO3 substrates. In contrast, an insulating phase was found in strained LiV2O4 thin films on MgO substrates, revealing the key role of the lattice in stabilising the metallic ground state. In this presentation, we discuss the thin film fabrication and the effect of epitaxial strain on heavy fermion behaviour in LiV2O4.
S. Kondo et al., PRL 78, 3729 (1997)
C. Urano et al., PRL 85, 1052 (2000)

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