Regensburg 2016 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 58: Transport: Poster Session
TT 58.39: Poster
Wednesday, March 9, 2016, 15:00–18:30, Poster D
Magnetic field-effect transistor in carbon nanotubes — •Magdulin Dwedari1, Thomas Stegmann1,2, and Nikodem Szpak1 — 1Fakultät für Physik, Universität Duisburg-Essen, Duisburg — 2Instituto de Ciencias Fisicas, Universidad Nacional Autonoma de Mexico, Cuernavaca
It is well known that low-energy electronic excitations in graphene behave like massless Dirac fermions. Since particles (excitations) and antiparticles (holes) react oppositely to the magnetic field a magnetic field-effect transistor emerges when a carbon nanotube is placed in a perpendicular magnetic field and contacted appropriately. We calculate the current flow theoretically within a semiclassical model and simulate it numerically.