Regensburg 2016 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 85: Graphene: Electronic Properties & Structure
(Joint session of O and TT organized by O)
TT 85.8: Vortrag
Freitag, 11. März 2016, 12:15–12:30, S051
Substrate nanofacets as a stamp for graphene charge carrier modulations — •Jan Honolka1, Martin Vondracek1, Ladislav Fekete1, Jaromir Kopecek1, Jan Lancok1, Dipankar Kalita2, Johann Coraux2, and Vincent Bouchiat2 — 1Institute of Physics, ASCR, CZ-Prague — 2Department Nanosciences, CNRS, F-Grenoble
We report on 1D quasiperiodic modulations of graphene electron doping, probed by spatial mapping of the electronic band structure in wave-vector-resolved photoemission microscopy (k-PEEM).
Sampling local topography and diffraction, we show that a nanometer-scale periodic structuration and electronic doping by several 0.1eV can be achieved straightforwardly in graphene, as-grown by CVD on high-index vicinal copper. The pattern consists of a roof-top-like alternance of Cu facets of distinctive symmetries, formed by surface energy minimization at the atomic scale, which drives copper and carbon mass-transfers during high-temperature CVD.
The general concept of this work can be extended towards other chemical vapor deposited 2D systems of current interest such as semiconducting transition metal dichalcogenides, e.g. MoS_2, insulating hexagonal boron nitride (h-BN) monolayers, and respective hybrid structures.