Dresden 2017 – wissenschaftliches Programm
CPP 9.11: Vortrag
Montag, 20. März 2017, 18:00–18:15, ZEU 260
Drift of Dopants in Organic Semiconductors — •Lars Mueller1,2,3, Seon-Young Rhim1,3, Vipilan Sivanesan1,3, Dongxiang Wang1, Sebastian Beck1,3, Annemarie Pucci1,3, Wolfgang Kowalsky1,2,3, and Robert Lovrincic1,2 — 1InnovationLab, Heidelberg, Germany — 2Institute for High-Frequency Technology, TU Braunschweig, Germany — 3Kirchhoff Institute for Physics, Heidelberg University, Germany
Electrical doping of organic semiconductors is widely applied to fabricate high performance organic electronic devices. The usually unwanted but still prevalent effect of dopant mobility in organic semiconductors is known for various dopant molecules in terms of diffusion towards a stable equilibrium. A mostly neglected effect is the influence of operating conditions that can cause a drift of dopants additionally to the known diffusion. We study this drift behavior and compare different dopant-host combinations, starting from Poly(3-hexylthiophen-2,5-diyl) (P3HT) doped with 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) to larger dopant molecules and different host materials. We find a dynamic drift-process that can be utilized to deliberately create highly doped and almost undoped regions within one thin film, resulting in a spatially altered conductivity. To demonstrate the applicability, we show first data of a proof-of-principle memory device that is based on a spatially controlled dopant distribution.