Dresden 2017 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 13: SYNS - Symposium Nanostructuring Beyond Conventional Lithography
(MI with DS, DF, HL, MM and VA)

DF 13.1: Hauptvortrag

Mittwoch, 22. März 2017, 15:00–15:30, HSZ 02

The Limits to Lithography: How Electron-Beams Interact with Materials at the Smallest Length Scales — •Karl K. Berggren — Massachusetts Institute of Technology (MIT), 77 Massachusetts Ave., Cambridge, MA, USA

Electron-beam lithography is a ubiquitous tool required by the modern industry and research enterprise. The semiconductor industry relies on it for mask making, while researchers use it for prototyping advanced device concepts and structuring materials to achieve desired form and function. However, surprisingly the impact of the underlying physics of the interaction of electrons with radiolytic materials such as photoresist has been somewhat neglected in describing the limits of lithography. It has been known for some time that, lithographic systems suffer from spatial blurring due to the creation of secondary electrons and the propagation of these secondary electrons in space. What was not as well understood was the role of electro-galvanic effects--plasmons--in the limiting the performance of sub-10-nanometer lithography.

In this talk, I will describe efforts to improve the resolution and performance of sub-10-nm lithographic systems based on enhancement of resist processing. I will then point out the role plasmons (primarily in the bulk) play in limiting the resolution of lithography at the sub-10-nm scale. Finally, I will present some key applications of lithographic patterning at this length scale, and discuss the future implications of the work to related fields such as optical lithography, microscopy, and electromagnetic radiation generation.