Dresden 2017 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 2: Various Topics I
DF 2.2: Vortrag
Montag, 20. März 2017, 09:50–10:10, GER 37
Robust in-plane ferroelectricity over room temperature in atomic-thick SnTe — •Kai Chang1,2, Junwei Liu3,2, Haicheng Lin2, Na Wang2, Kun Zhao2, Yong Zhong2, Xiaopeng Hu2, Wenhui Duan2, Liang Fu3, Qi-Kun Xue2, Xi Chen2, Shuai-Hua Ji2, and Stuart Parkin1 — 1NISE, Max-Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120, Germany — 2State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China — 3Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, applying molecular beam epitaxy (MBE) and variant temperature scanning tunneling microscopy (VT-STM), we have studied the stable in-plane spontaneous polarization in atomic-thick SnTe, down to a 1-unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 K [1] and reaches as high as 270 K. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature [2]. Recent high temperature STM experiments show that the ferroelectricity of 2- and 3-UC SnTe films persists even up to 380 K, comparable with the classical perovskite ferroelectric BaTiO3. [1] M. Iizumi et al., J. Phys. Soc. Jpn. 38, 443 (1975). [2] K. Chang et al., Science, 353, 274 (2016).