Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 13: Phase Change/Resistive Switching
DS 13.3: Talk
Monday, March 20, 2017, 15:30–15:45, CHE 91
Characterization of the early stages in the MBE-growth of phase change materials — •Marvin Kaminski1, Marc Pohlmann1, Matti Wirtssohn1, Abderrafii Moktad1, Peter Jost1, and Matthias Wuttig1,2,3 — 1I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany — 2JARA-FIT, RWTH Aachen University, Germany — 33JARA-Insitut Energy-efficient information technology (PGI-10), FZ Jülich, 52428 Jülich, Germany
In chalcogenide-based phase-change materials (PCMs), the switching between the amorphous and the crystalline phase is fast, reversible, and concomitant with a prominent contrast in physical properties. PCMs are, therefore, among the most promising candidates for future non-volatile electronic memory applications. Recent developments such as the concept of interfacial phase-change materials (IPCMs), where thin layers of Sb2Te3 and GeTe are stacked as superlattices, call for highly-textured or even epitaxial films, which can be produced by sputter deposition, MOPVE, and molecular beam epitaxy (MBE). In this work, we study thin MBE-grown chalcogenide layers on Si(111). The combination of in-situ RHEED and ARHEED as well as ex-situ XRD, SEM, and AFM measurements provides insights on the early stages of the growth process. As the early stages of the growth govern the overall quality of the film to a large extent, proper understanding is crucial for further optimization.