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Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Phase Change/Resistive Switching

Montag, 20. März 2017, 15:00–16:45, CHE 91

15:00 DS 13.1 Towards Shot Noise Study of Hafnium Oxide Resistive Switching — •Donato Civita, Carlos Sabater, and Jan van Ruitenbeek
15:15 DS 13.2 Nonvolatile resistive switching to 10 ^6 OFF/ON resistance ratio in yttrium manganite thin films with downscaled top electrodes — •Venkata Rao Rayapati, Agnieszka Bogusz, Nan Du, Danilo Bürger, Ilona Skorupa, Stefan E Schulz, Oliver G Schmidt, and Heidemarie Schmidt
15:30 DS 13.3 Characterization of the early stages in the MBE-growth of phase change materials — •Marvin Kaminski, Marc Pohlmann, Matti Wirtssohn, Abderrafii Moktad, Peter Jost, and Matthias Wuttig
15:45 DS 13.4 Accurately controllable phase transitions in pulsed laser deposition-deposited GeTe films for multi-level memory applications — •Xinxing Sun, Andriy Lotnyk, Martin Ehrhardt, Pierre Lorenz, Jürgen W. Gerlach, and Bernd Rauschenbach
16:00 DS 13.5 Investigation of oxygen vacancy formation and migration in HfO2 from density functional theory — •Marta Gibertini, Daniel Wortmann, Gustav Bihlmayer, Shigeru Tsukamoto, and Stefan Blügel
16:15 DS 13.6 Effect of heavy ion radiation on resistive switching in HfOx based RRAM devices grown by MBE — •Stefan Vogel, S. U. Sharath, J. Lemke, E. Hildebrandt, C. Trautmann, and L. Alff
16:30 DS 13.7 Reducing variability by introduction of thin TiO2-layers into HfO2 switching cells — •Alexander Hardtdegen, Camilla La Torre, Stephan Menzel, Rainer Waser, and Susanne Hoffmann-Eifert
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DPG-Physik > DPG-Verhandlungen > 2017 > Dresden