Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 13: Phase Change/Resistive Switching

DS 13.7: Vortrag

Montag, 20. März 2017, 16:30–16:45, CHE 91

Reducing variability by introduction of thin TiO2-layers into HfO2 switching cells — •Alexander Hardtdegen1, Camilla La Torre2, Stephan Menzel1, Rainer Waser1,2, and Susanne Hoffmann-Eifert11Peter Grünberg Institute and JARA-Fit, Forschungszentrum Jülich GmbH, Jülich, Germany — 2Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

Non-volatile resistive random access memory (ReRAM) cells are interesting for storage class memories, where for industrial purpose HfO2 is typically used as oxide switching layer. The main challenge of HfO2 is the slightly increased variability.

By designing bilayer cells combining HfO2 with TiO2, improvements of switching behavior can be observed. The devices switch more stable and a gradual SET with self-limiting behavior becomes visible. In contrast to this, the RESET becomes more abrupt when switching with higher current compliances. This behavior can be explained by an intrinsic stack-dependent series resistance, which can be quantified by a numerical method and also verified by physics-based compact model simulations.

In this study, the influence of the HfO2/TiO2 ratio is investigated in respect to the switching stability and the series resistance.

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