Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 14: 2D Materials Beyond Graphene II (jointly with CPP)

DS 14.2: Vortrag

Montag, 20. März 2017, 16:15–16:30, REC/PHY C213

Growth of Ge and Si on the monolayer silicene on Ag(111) — •Deng-Sung Lin and Han-De Chen — National Tsing Hua University, Hsinchu, Taiwan

Growth of Ge by molecular beam epitaxy on top of silicene monolayer on the Ag(111) surface results in either a dispersed adlayer or a two-dimensional ordered depending on the silicene phases. Scanning tunneling microscopy images show that the ordered adsorbed Ge atoms on the domains occupy directly on top of down-atoms in the buckled silicene layer.[1] By contrast, further growth Si on the silicene up to several MLs results in an atomic flat film with surface structure. We use low-temperature scanning tunneling microscopy to observe the chemical response of the film surface exposed to an atomic deuterium (D) beam. We find D displaces the Ag surfactant adatoms, resulting in a D-terminated (1x1) surface. The displaced Ag atoms migrate on the surface to form Ag(111) crystallites. The results confirm that the surfaces of the few-layer Si films grown on Ag(111) are Ag terminated and suggest that the films have a diamond-like structure [2].

[1]. Chen, H.-D.; Lin, D.-S., ACS Omega 2016, 1, 357-362. [2]. Chen, H.-D.; Chien, K.-H.; Lin, C.-Y.; Chiang, T.-C.; Lin, D.-S. J. Phys. Chem. C 2016, 120, 2698-2702.