Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: 2D Materials Beyond Graphene II (jointly with CPP)
DS 14.9: Vortrag
Montag, 20. März 2017, 18:00–18:15, REC/PHY C213
SPM study of atomically thin MoS2 grown on HOPG via chemical vapor deposition — •Erik Pollmann and Marika Schleberger — Fakultät für Physik, Universität Duisburg-Essen, 47048 Duisburg, Germany
Van der Waals heterostructures are material systems based on combinations of different 2D materials such as graphene, hBN and MoS2 to mix their properties or even create new ones. Monolayers of MoS2 on HOPG could be used as a model system for the MoS2-graphene interface and has been studied e.g. by Koós et al. [1].
The aim of our work is to understand the growth mechanism of MoS2 on this graphene-like surface in order to exploit this knowledge to grow MoS2 directly on graphene itself. Therefor MoS2 flakes are grown by chemical vapor deposition and investigated by different Scanning Probe Microscopy techniques. It will be shown, that MoS2 is more likely to grow at HOPG edges. These one-dimensional defects act as the growth seeds. This would constitute a serious disadvantage for the direct growth on graphene where no step edges are present. Therefore, we investigated if point defects can act as growth seeds as well. To this end, an HOPG crystal was irradiated by highly charged ions to induce quasi zero-dimensional defects [2] before the chemical vapor deposition of MoS2. The first results obtained from these experiments will be presented.
[1] A. A. Koós et al. Carbon 105, 408-415 (2016)
[2] J. Hopster et al. 2D Materials 1, 1011011 (2014)