Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 22: Two-dimensional materials III (jointly with HL/TT)
DS 22.4: Vortrag
Dienstag, 21. März 2017, 10:15–10:30, POT 51
Electron-phonon interaction in transition metal dichalcogenides — •Nicki F. Hinsche1, Arlette Sohanfo Ngankeu2, Sanjoy Mahatha2, Marco Bianchi2, Charlotte Sanders2, Philip Hofmann2, and Kristian S. Thygesen1 — 1Center for Atomic-scale Materials Design, Technical University of Denmark, 2830 Kgs. Lyngby, Denmark — 2Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
Atomically thin layers of Transition Metal Dichalcogenides (TMD) attract remarkable interest due to their extraordinary electronic and optical properties and are often quoted as semiconductor analogues of graphene. Possessing direct band gaps in the visible frequency range and exhibiting high electronic mobilities at room temperature, TMD’s are emerging candidates for next generation electronic and optoelectronic applications [1]. By means of DFT electronic-structure and Boltzmann transport calculations [2], we discuss the impact of microscopic electron-phonon interaction onto the renormalization of the electronic structure and the phonon-limited electronic transport properties for two prototypical TMD’s: TaS2 and WS2. Our analysis and conclusions will be drawn closely to recent experimental findings [3].
[1] F. A. Rasmussen and K. S. Thygesen. Journ. of Phys. Chem. C 13 169 (2015) [2] N. F. Hinsche et al., ACS Nano 9 4406 (2015) [3] C. E. Sanders et al., Physical Rev. B. 94 081404 (2016)