Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 28: Focussed Session: Oxide Semiconductors for Novel Devices I

Mittwoch, 22. März 2017, 09:30–13:00, CHE 89

09:30 DS 28.1 Topical Talk: Self-consistent hybrid functional calculations: Electronic and optical properties of oxide semiconductors — •Daniel Fritsch, Benjamin Morgan, and Aron Walsh
10:00 DS 28.2 High-throughput screening of transparent conducting oxides — •Christopher Sutton, Robert J. N. Baldock, Luca M. Ghiringhelli, and Matthias Scheffler
10:15 DS 28.3 Pressure-dependent elastic properties of Ga2O3 in the α and β phase from first principles — •Konstantin Lion, Dmitrii Nabok, Pasquale Pavone, and Claudia Draxl
10:30 DS 28.4 Ab-initio lattice dynamics of Ga2O3 polymorphs with an emphasis on polar phonon modes — •Rut Waldenfels, Dmitrii Nabok, Pasquale Pavone, and Claudia Draxl
10:45 DS 28.5 Anisotropic thermal conductivity in Ga2O3 — •Mitdank Rüdiger, Handwerg Martin, Galazka Zbigniew, and Fischer Saskia F.
  11:00 15 min. break.
11:15 DS 28.6 Topical Talk: Exceptional Points in Oxide Bulk and Metamaterials — •Marius Grundmann
11:45 DS 28.7 Dielectric function and band structure of α Ga2O3 — •Martin Feneberg, Anderson Janotti, Maciej D. Neumann, Norbert Esser, Luis Artus, Ramon Cuscó, Tomohiro Yamaguchi, and Rüdiger Goldhahn
12:00 DS 28.8 Topical Talk: Kinetics and thermodynamcis of binary and ternary oxides during molecular beam epitaxy — •Patrick Vogt and Oliver Bierwagen
12:30 DS 28.9 Tin Assisted Growth of є-Ga2O3 on c-plane Sapphire — •Max Kracht, Alexander Karg, Jörg Schörmann, and Martin Eickhoff
12:45 DS 28.10 Transport properties of the In2O3 surface electron accumulation layer — •Alexandra Papadogianni, Julius Rombach, and Oliver Bierwagen
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DPG-Physik > DPG-Verhandlungen > 2017 > Dresden