Dresden 2017 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 31: 2D Materials Beyond Graphene III (jointly with O)
DS 31.6: Vortrag
Mittwoch, 22. März 2017, 11:45–12:00, WIL A317
Transfer of a 2D silica sheet — •Christin Büchner1, Kristen M. Burson2, Markus Heyde1, and Hans-Joachim Freund1 — 1Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany — 2Hamilton College, Clinton, NY, USA
Two-dimensional (2D) materials hold immense technological potential for creating nanoelectronic devices. Highly conductive materials such as graphene are combined with insulators but the library of 2D materials with large band gap is effectively limited to h-BN. 3D insulators can compromise the electronic properties of graphene due to structural defects and surface roughness.
We present a 2D SiO2 bilayer film, prepared on a Ru(0001) substrate via CVD. The atomic structure has been investigated using scanning probe microscopy.[1] Extended honeycomb structures and glass-like network structures were identified, while DFT calculations and STS measurements indicate a band gap larger than 6.5 eV.[2,3]
Recently, we transferred the bilayer from the growth substrate to a new substrate using a modified mechanical exfoliation procedure. The film maintains its atomically flat structure on the mm-scale after being transferred to a foreign substrate [4]. Low energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy and environmental scanning electron microscopy indicate that the structure is maintained throughout the transfer procedure.
[1] DOI: 10.1002/anie.201107097 [2] DOI: 10.1063/1.4939279 [3] DOI: 10.1088/0953-8984/24/35/354010 [4] DOI: 10.1021/acsnano.6b03929