Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.30: Poster
Mittwoch, 22. März 2017, 17:00–19:00, P2-EG
Resistive switching dynamics in BiFeO3 — •Nan Du1, Niveditha Manjunath1, Yuan Li1, Tiangui You1, Danilo Buerger1, Ilona Skorupa1,2, Damian Walczyk3, Christian Walczyk3, Thomas Schroeder3, Stephan Menzel4, Eike Linn5, Rainer Waser4,5, Oliver G. Schmidt1,6, and Heidemarie Schmidt1 — 1Faculty of Electrical and Information Engineering, TU Chemnitz — 2Institute of Ion Beam Physics and Materials Research, HZDR — 3Leibniz-Institut für innovative Mikroelektronik, IHP — 4Peter Grünberg Institut, Forschungszentrum Jülich — 5Institut für Werkstoffe der Elektrotechnik, RWTH Aachen — 6Institute for Integrative Nanosciences, IFW Dresden
Experimental and model impedance and dynamic switching experiments for the study of hopping transport of electron charges and positively charged oxygen vacancies in memristive BiFeO3 switches with substitutional Ti donors close to the bottom electrode are reported. The drift velocity of oxygen vacancies in the electric field of the writing pulse determines the dynamics of resistive switching. The modelled activation energy for trapping and release of oxygen vacancies at the bottom electrode reflects the local enhancement of the electrostatic potential profile at the bottom electrode due to the Ti donors. The data analysis of the experimental electrostatic potential profile will be useful for a quantitative comparison between experimental and future principles computational design of memristive oxide switches with substitutional dopants for trapping and releasing oxygen vacancies.