Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.51: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Sputter Deposition of Nitrogen doped ZnMgO Thin Films — •Hannes Giese, Philipp Schurig, and Angelika Polity — I. Physikalisches Institut, Justus-Liebig-Universität, Giessen, Deutschland

ZnO is an intrinsic n-type semiconductor, which is favourable for the use as a transparent conductive thin film produced by sputter deposition. The addition of MgO results in a ternary system that has a tuneable band gap in dependence on the amount of Mg inside the system. The Mg content also has an influence on the crystal structure of the material. For many years theoretical calculations have shown the possibility of p-type doped ZnMgO for usage as optoelectronic devices made of ZnMgO homojunctions for example. The most promising way is doping the material with nitrogen to create the necessary defect levels above the valence band. The thin films are produced by RF sputter deposition from a self-made ceramic target with a composition of Zn(0,8)Mg(0,2)O with argon and oxygen as sputtering gases. Furthermore, an addition of nitrogen-gas as a reactive gas should lead to defects that provide a p-type doping. The nitrogen gas flow is varied in a wide range to investigate this influence. The changes in crystal quality, optical properties and electric behaviour are characterized by XRD, UV/Vis spectroscopy and Hall-effect measurements.