Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Postersession II
DS 44.23: Poster
Donnerstag, 23. März 2017, 17:00–19:00, P1C
Dopant-Drift in Organic Semiconductors in Dependence of Different Parameters — •Seon-Young Rhim1,3, Lars Müller1,2,3, Vipilan Sivanesan1,3, Dongxiang Wang1, Jakob Bernhardt1,3, and Wolfgang Kowalsky1,2,3 — 1InnovationLab Heidelberg — 2Institute for High-Frequency Technology, TU Braunschweig — 3Kirchhoff Institute for Physics, Heidelberg University
The increase in the electrical conductivity of organic semiconductors by doping enables the fabrication of organic electronic devices with high performance. We show that besides the already known dopant diffusion due to a concentration gradient, the dopants are subject to a drift caused by certain operating conditions. In this study we use I(V)-Curve measurements, optical microscopy and spatially resolved infrared spectroscopy for the investigation of the dopant movement. For the device preparation different solution-processable organic hole conducting host-materials as Poly(3-hexylthiophen-2,5-diyl) (P3HT) and p-dopants as 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) were utilized. In dependence of the applied voltage and respective current we observe the formation of an undoped region which we analyze in terms of dopant concentration and other operational parameters. Furthermore we compare the conventional doping in solution to the recently applied sequential doping method. The spatial control of the doped and undoped region within an organic semiconductor can be used to produce passive electronic devices with simple structures. As example we introduce a passive resistor and a non-volatile memory device.