Dresden 2017 – wissenschaftliches Programm
DS 46.5: Vortrag
Freitag, 24. März 2017, 10:30–10:45, CHE 89
Ion Induced Surface Pattern Formation by ion implantation — •Hans Hofsäss, Kun Zhang, and Omar Bobes — Fakultät für Physik, Universität Göttingen, Göttingen, Germany
Recently Bradley and Hofsäss introduced ion implantation as an additional effect contributing to pattern formation. The theory is briefly introduced and the calculation of implantation curvature coefficients, based on the linear continuum models for pattern formation and the crater function formalism are described. The calculations use Monte Carlo simulations, taking into account contributions due to erosion, implantation, recoil redistribution and the dynamic layer thickness effect. We are now able to quantitatively predict pattern formation or surface stability for a variety of ion-target systems and a broad range of irradiation conditions. Pattern formation on a-C surfaces by C+ and Ne+ ion irradiation as well as N+ ion irradiation of Si and Si3N4 demonstrate that ion implantation can be crucial for pattern formation.