Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 48: Oxide Semiconductors (jointly with HL)
DS 48.3: Vortrag
Freitag, 24. März 2017, 10:15–10:30, POT 51
Influence of temperature on the creation of Rydberg excitons — •Peter Grünwald1, Julian Heckötter2, Marc Aßmann2, Dietmar Fröhlich2, Manfred Bayer2, Heinrich Stolz1, and Stefan Scheel1 — 1Institut für Physik, Universität Rostock, Rostock, Germany — 2Experimentelle Physik 2, TU Dortmund, Dortmund, Germany
Solid-state systems are heavily influenced by temperature, changing the crystal structure and thus shifting the energy bands [1,2]. Excitons in semiconductors additionally experience collision ionization, and a decrease of the band edge due to plasma interaction [3]. However, in most semiconductor systems, measuring these effects is difficult because of the limited number of exciton states available. This is different for Rydberg excitons [4], where states up to n20 can easily be generated. Hence, these states can be used to analyze the temperature influence on the excited states and the excitation limit set by finite temperature.
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[3] D. Semkat et al., Phys. Rev. B 80, 155201 (2009).
[4] T. Kazimierczuk et al., Nature 514, 343 (2014).